TK46E08N1,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0084 Ω@10V, TO-220, U-MOSⅧ-H
TK46E08N1,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0084 Ω@10V, TO-220, U-MOSⅧ-H
Description
General part information
TK46E08N1 Series
12V - 300V MOSFETs, N-ch MOSFET, 80 V, 0.0084 Ω@10V, TO-220, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TK46E08N1,S1X |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 80 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 37 nC, 37 nC |
| Input Capacitance (Ciss) (Max) | 2500 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 103 W |
| Rds On (Max) | 8.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Simplified CFD Model Application Note
Resonant Circuits and Soft Switching
Selection Guide MOSFETs 2025 Rev1.0
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Electrical Characteristics: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Maximum Ratings: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Structures and Characteristics: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
MOSFET SPICE model grade
Motor Control (Vacuum Cleaners)
Reverse Recovery Operation and Destruction of MOSFET Body Diode
TK46E08N1 Data sheet/Japanese
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
TK46E08N1 Data sheet/English
Derating of the MOSFET Safe Operating Area
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Avalanche energy calculation
MOSFET Self-Turn-On Phenomenon
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
RC Snubbers for Step-Down Converters
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes