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STPSC15H12G2Y-TR - ONSEMI FFSD08120A

STPSC15H12G2Y-TR

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 15 A, 94 NC, D2PAK-HV

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Search across all available documentation for this part.

DocumentsAN4242+13
STPSC15H12G2Y-TR - ONSEMI FFSD08120A

STPSC15H12G2Y-TR

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 15 A, 94 NC, D2PAK-HV

Deep-Dive with AI

DocumentsAN4242+13

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.87
10$ 6.74
100$ 5.62
500$ 4.96
Digi-Reel® 1$ 7.87
10$ 6.74
100$ 5.62
500$ 4.96
Tape & Reel (TR) 1000$ 4.09
NewarkEach (Supplied on Cut Tape) 1$ 10.19
10$ 7.94
25$ 7.50
50$ 7.05
100$ 6.70
250$ 6.60
500$ 6.42
1000$ 6.41

Description

General part information

STPSC15H12G2Y-TR Series

This 15 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.

The STPSC15H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.