Specification	SI3495DV-T1-GE3

Current - Continuous Drain (Id) (Ta)	5.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	38 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	1.1 W
Rds On (Max)	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	750 mV

SI3495 Series

Part	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Technology	Package Name	Power Dissipation (Max)	Gate Charge (Max)	Package / Case	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)
Vishay Dale SI3495DV-T1-E3	5 V	P-Channel	20 V	4.5 V	1.5 V	750 mV	5.3 A	MOSFET (Metal Oxide)	6-TSOP	1.1 W	38 nC	SOT-23-6 Thin TSOT-23-6	Surface Mount	-55 °C	150 °C	24 mOhm
Vishay Dale SI3495DV-T1-GE3	5 V	P-Channel	20 V	4.5 V	1.5 V	750 mV	5.3 A	MOSFET (Metal Oxide)	6-TSOP	1.1 W	38 nC	SOT-23-6 Thin TSOT-23-6	Surface Mount	-55 °C	150 °C	24 mOhm

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