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WNSXXXXXXXXWQ

BYQ60W-600PT2Q

Active
WeEn Semiconductors

DIODE GEN PURP 600V 60A TO247-2

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WNSXXXXXXXXWQ

BYQ60W-600PT2Q

Active
WeEn Semiconductors

DIODE GEN PURP 600V 60A TO247-2

Find alt

Description

General part information

BYQ60 Series

Diode 600 V 60A Through Hole TO-247-2

Technical Specifications

Parameters and characteristics for this part

SpecificationBYQ60W-600PT2Q
Current - Average Rectified (Io)60 A
Current - Reverse Leakage10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction175 °C
Package / CaseTO-247-2
Package NameTO-247-2
Reverse Recovery Time (trr)55 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V

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