BUK764R0-40E,118

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

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BUK764R0-40E,118

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK764R0-40E Series

Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK764R0-40E,118

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	54 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4405 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	182 W
Qualification	AEC-Q101
Rds On (Max)	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

BUK764R0-40E Series

N-channel TrenchMOS standard level FET

Part	Current - Continuous Drain (Id) (Tc)	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Vgs(th) (Max)	Grade	Power Dissipation (Max)	Technology	Qualification
Nexperia USA Inc. BUK764R0-40E,118	75 A	Surface Mount	4405 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	40 V	4 mOhm	54 nC	10 V	20 V	-55 °C	175 °C	D2PAK	4 V	Automotive	182 W	MOSFET (Metal Oxide)	AEC-Q101