Description
General part information
BSL215 Series
Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Technical Specifications
Parameters and characteristics for this part
| Specification | BSL215CH6327XTSA1 |
|---|---|
| Configuration | P-Channel Complementary, N |
| Current - Continuous Drain (Id) | 1.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| FET Feature Drive Voltage | 2.5 V |
| Gate Charge (Max) | 0.73 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 143 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | PG-TSOP6-6 |
| Power - Max | 0.5 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 140 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.2 V |
Pricing
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CAD
3D models and CAD resources for this part