Zenode.ai Logo

Description

General part information

HMC457 Series

The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.ApplicationsCDMA & W-CDMAGSM, GPRS & EdgeBase Stations & Repeaters

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC457QS16GE
Current - Supply500 mA
Frequency (Max)2.2 GHz
Frequency (Min)1.7 GHz
Gain27 dB
Mounting TypeSurface Mount
Noise Figure6 dB
P1dB29 dBm
Package FeaturesExposed Pad
Package Length0.154 in
Package Name16-SSOP, 16-QSOP-EP
Package Width3.9 mm
RF TypeGeneral Purpose
Test Frequency1.9 GHz
Voltage - Supply5 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources