
HMC457QS16GE
Obsolete1 WATT POWER AMPLIFIER SMT, 1.7 - 2.2 GHZ

HMC457QS16GE
Obsolete1 WATT POWER AMPLIFIER SMT, 1.7 - 2.2 GHZ
Description
General part information
HMC457 Series
The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.ApplicationsCDMA & W-CDMAGSM, GPRS & EdgeBase Stations & Repeaters
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC457QS16GE |
|---|---|
| Current - Supply | 500 mA |
| Frequency (Max) | 2.2 GHz |
| Frequency (Min) | 1.7 GHz |
| Gain | 27 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 6 dB |
| P1dB | 29 dBm |
| Package Features | Exposed Pad |
| Package Length | 0.154 in |
| Package Name | 16-SSOP, 16-QSOP-EP |
| Package Width | 3.9 mm |
| RF Type | General Purpose |
| Test Frequency | 1.9 GHz |
| Voltage - Supply | 5 VDC |
Pricing
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