Specification	BYT51K-TAP

Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Axial, SOD-57
Package Name	SOD-57
Reverse Recovery Time (trr)	4 µs
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max)	800 V
Voltage - Forward (Vf) (Max)	1.1 V

BYT51 Series

Part	Mounting Type	Technology	Voltage - Forward (Vf) (Max)	Current - Reverse Leakage	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max)	Package / Case	Package Name	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division BYT51A-TR	Through Hole	Avalanche	1.1 V	1 µA	4 µs	50 V	Axial SOD-57	SOD-57	175 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.5 A
Vishay General Semiconductor - Diodes Division BYT51K-TAP	Through Hole	Avalanche	1.1 V	1 µA	4 µs	800 V	Axial SOD-57	SOD-57	175 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.5 A
Vishay General Semiconductor - Diodes Division BYT51D-TR	Through Hole	Avalanche	1.1 V	1 µA	4 µs	200 V	Axial SOD-57	SOD-57	175 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.5 A
Vishay General Semiconductor - Diodes Division BYT51A-TAP	Through Hole	Avalanche	1.1 V	1 µA	4 µs	50 V	Axial SOD-57	SOD-57	175 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.5 A
Vishay General Semiconductor - Diodes Division BYT51B-TAP	Through Hole	Avalanche	1.1 V	1 µA	4 µs	100 V	Axial SOD-57	SOD-57	175 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.5 A
Vishay General Semiconductor - Diodes Division BYT51D-TAP	Through Hole	Avalanche	1.1 V	1 µA	4 µs	200 V	Axial SOD-57	SOD-57	175 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.5 A
Vishay General Semiconductor - Diodes Division BYT51G-TAP	Through Hole	Avalanche	1.1 V	1 µA	4 µs	400 V	Axial SOD-57	SOD-57	175 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.5 A
Vishay General Semiconductor - Diodes Division BYT51K-TR	Through Hole	Avalanche	1.1 V	1 µA	4 µs	800 V	Axial SOD-57	SOD-57	175 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.5 A
Vishay General Semiconductor - Diodes Division BYT51J-TR	Through Hole	Avalanche	1.1 V	1 µA	4 µs	600 V	Axial SOD-57	SOD-57	175 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.5 A

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BYT51K-TAP | Datasheet