Description
General part information
IPN60R Series
The 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R1K0PFD7S) completes theCoolMOS™7 offering for consumer applications. The IPN60R1K0PFD7S in a SOT-223 package features RDS(on)of 1,000mOhm resulting in low switching losses. The 600V CoolMOS™ PFD7 SJ MOSFETs come with an integrated fast body diode ensuring a robust device, reducing bill-of-material (BOM) for the customer. Infineon's industry-leading SMD packages further reduce PCB space and facilitate manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPN60R1K0PFD7SATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4.7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 6 nC |
| Input Capacitance (Ciss) (Max) | 230 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-261-3, TO-261AA, TO-261-4 |
| Package Name | PG-SOT223-3-1, PG-SOT223-4 |
| Power Dissipation (Max) | 6 W |
| Rds On (Max) | 1 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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