2SC5866TLR

LTB

Rohm Semiconductor

BIPOLAR TRANSISTORS - BJT NPN 60V 2A

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2SC5866TLR

LTB

Rohm Semiconductor

BIPOLAR TRANSISTORS - BJT NPN 60V 2A

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Description Specifications Series Pricing CAD Documents

Description

General part information

2SC5866 Series

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5866TLR

Current - Collector (Ic) (Max)	2 A
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min)	120
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-96
Package Name	TSMT3
Power - Max	0.5 W
Transistor Type	NPN
Vce Saturation (Max)	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

2SC5866 Series

NPN, SOT-346T, 60V 2A, High Speed Switching Transistor

Part	Current - Collector (Ic) (Max)	Frequency - Transition	DC Current Gain (hFE) (Min)	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Current - Collector Cutoff (Max)	Power - Max	Package Name	Mounting Type	Vce Saturation (Max)	Operating Temperature
Rohm Semiconductor 2SC5866TLR	2 A	200 MHz	120	NPN	60 V	SC-96	1 µA	0.5 W	TSMT3	Surface Mount	500 mV	150 °C

Pricing

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