Specification	IRFD220PBF

Current - Continuous Drain (Id) (Ta)	800 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14 nC
Input Capacitance (Ciss) (Max)	260 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-DIP, 4-HVMDIP
Package Width	7.62 mm
Power Dissipation (Max)	1 W
Rds On (Max)	800 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFD220 Series

Part	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Package Width	Package Name	Package Length	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	FET Type	Rds On (Max)	Vgs(th) (Max)	Technology
Vishay Dale IRFD220PBF	Through Hole	20 V	200 V	-55 °C	150 °C	14 nC	800 mA	7.62 mm	4-DIP 4-HVMDIP	0.3 in	10 V	260 pF	1 W	N-Channel	800 mOhm	4 V	MOSFET (Metal Oxide)
Vishay Dale IRFD220	Through Hole	20 V	200 V	-55 °C	150 °C	14 nC	800 mA	7.62 mm	4-DIP 4-HVMDIP	0.3 in	10 V	260 pF	1 W	N-Channel	800 mOhm	4 V	MOSFET (Metal Oxide)

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