IPU135N08N3 G

Obsolete

MOSFET N-CH 80V 50A TO251-3

Obsolete

MOSFET N-CH 80V 50A TO251-3

Description

General part information

N-Channel 80 V 50A (Tc) 79W (Tc) Through Hole PG-TO251-3

Parameters and characteristics for this part

Specification	IPU135N08N3 G

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	25 nC
Input Capacitance (Ciss) (Max)	1730 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	PG-TO251-3
Power Dissipation (Max)	79 W
Rds On (Max)	13.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

Part	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max)	Technology	Package / Case	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type
INFINEON IPU135N08N3 G	20 V	N-Channel	1730 pF	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	13.5 mOhm	50 A	25 nC	79 W	80 V	3.5 V	6 V	10 V	PG-TO251-3	-55 °C	175 °C	Through Hole
INFINEON IPU135N03L G	20 V	N-Channel	1000 pF	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	13.5 mOhm	30 A	10 nC	31 W	30 V	2.2 V	4.5 V	10 V	PG-TO251-3	-55 °C	175 °C	Through Hole

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