D251N08BXPSA1

Obsolete

Infineon Technologies

DIODE GEN PURP 800V 255A

Search across all available documentation for this part.

Obsolete

Infineon Technologies

DIODE GEN PURP 800V 255A

Technical Specifications

Parameters and characteristics for this part

Specification	D251N08BXPSA1

Current - Average Rectified (Io)	255 A
Current - Reverse Leakage @ Vr	30 mA
Mounting Type	Stud Mount
Package / Case	Stud, DO-8, DO-205AA
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Technology	Package / Case	Current - Reverse Leakage @ Vr	Mounting Type	Current - Average Rectified (Io)	Supplier Device Package
Infineon Technologies D251N18BXPSA1	1800 V	Standard Recovery >500ns	200 mA	Standard	DO-205AA DO-8 Stud	30 mA	Stud Mount	255 A
Infineon Technologies D251N08BXPSA1	800 V	Standard Recovery >500ns	200 mA	Standard	DO-205AA DO-8 Stud	30 mA	Stud Mount	255 A
Infineon Technologies D251N18BB01XPSA1	1800 V	Standard Recovery >500ns	200 mA	Standard	BG-DSW27-1	30 mA	Stud Mount	255 A	BG-DSW27-1

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 800 V 255A Stud Mount

Technical documentation and resources