Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STPSC2H065BY-TR | STPSC2 Series |
|---|---|---|
| Capacitance @ Vr, F | - | 190 pF |
| Current - Average Rectified (Io) | 2 A | 2 - 5 A |
| Current - Reverse Leakage @ Vr | 20 µA | 12 - 20 µA |
| Grade | Automotive | Automotive |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C | -40 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Qualification | AEC-Q101 | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Speed | No Recovery Time | No Recovery Time |
| Speed | - | 200 - 500 mA |
| Supplier Device Package | DPAK | DPAK |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V | 1.2 - 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V | 1.5 - 1.55 V |
STPSC2 Series
Automotive 650V, 2 A Silicon Carbide Power Schottky Diode
| Part | Reverse Recovery Time (trr) | Speed | Current - Reverse Leakage @ Vr | Package / Case | Grade | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Current - Average Rectified (Io) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Qualification | Supplier Device Package | Speed | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC2H065BY-TR | 0 ns | No Recovery Time | 20 µA | DPAK (2 Leads + Tab), SC-63, TO-252-3 | Automotive | 650 V | 1.55 V | Surface Mount | 2 A | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | AEC-Q101 | DPAK | ||
STMicroelectronics STPSC2H12B2Y-TR | 12 µA | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 1.2 kV | 1.5 V | Surface Mount | 5 A | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | DPAK | 200 mA, 500 ns | 190 pF | ||||
STMicroelectronics STPSC2H065B-TR | No Recovery Time | 20 µA | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 650 V | 1.55 V | Surface Mount | 2 A | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | DPAK |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.60 | |
| 5000 | $ 0.57 | |||
| 12500 | $ 0.54 | |||
Description
General part information
STPSC2 Series
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC2H065-Y SiC diode will boost performance in hard switching conditions.
Documents
Technical documentation and resources