STP18N65M2

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STMicroelectronics

N-CHANNEL 650 V, 0.275 OHM TYP., 12 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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STP18N65M2

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STMicroelectronics

N-CHANNEL 650 V, 0.275 OHM TYP., 12 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STP18 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	STP18N65M2

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	770 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Package Name	TO-220
Power Dissipation (Max)	110 W
Rds On (Max)	330 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	4 V

STP18 Series

N-channel 650 V, 198 mOhm typ., 15 A MDmesh M5 Power MOSFET in a TO-220 package

Part	FET Type	Gate Charge (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Power Dissipation (Max)	Mounting Type	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)
STMicroelectronics STP18N65M2	N-Channel	20 nC	4 V	650 V	MOSFET (Metal Oxide)	25 V	770 pF	12 A	150 °C	330 mOhm	10 V	TO-220	110 W	Through Hole	TO-220-3
STMicroelectronics STP18N65M5	N-Channel	31 nC	5 V	650 V	MOSFET (Metal Oxide)	25 V	1240 pF	15 A		220 mOhm	10 V	TO-220	110 W	Through Hole	TO-220-3	-55 °C	150 °C
STMicroelectronics STP18N60M6	N-Channel	16.8 nC	4.75 V	600 V	MOSFET (Metal Oxide)	25 V	650 pF	13 A		280 mOhm	10 V	TO-220	110 W	Through Hole	TO-220-3	-55 °C	150 °C

Pricing

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CAD

3D models and CAD resources for this part