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STP18N65M2 - STMICROELECTRONICS BD242B

STP18N65M2

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STMicroelectronics

N-CHANNEL 650 V, 0.275 OHM TYP., 12 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENAN4337+26
STP18N65M2 - STMICROELECTRONICS BD242B

STP18N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.275 OHM TYP., 12 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice ENAN4337+26

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP18N65M2
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
Input Capacitance (Ciss) (Max) @ Vds770 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs330 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.56
50$ 2.06
100$ 1.69
500$ 1.43
1000$ 1.21
2000$ 1.15
5000$ 1.11
NewarkEach 1$ 3.16
10$ 2.13
100$ 2.00
500$ 1.78
1000$ 1.71
3000$ 1.67
5000$ 1.65

Description

General part information

STP18N65M2 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.