IXFN210N30P3
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 192 A, 300 V, 0.0145 OHM, 10 V, 5 V
IXFN210N30P3
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 192 A, 300 V, 0.0145 OHM, 10 V, 5 V
Description
General part information
IXFN210 Series
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN210N30P3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 192 A |
| Drain to Source Voltage (Vdss) | 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 268 nC |
| Input Capacitance (Ciss) (Max) | 16200 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227B |
| Power Dissipation (Max) | 1500 W |
| Rds On (Max) | 14.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources