STFI4N62K3

Obsolete

STMicroelectronics

MOSFET N CH 620V 3.8A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N CH 620V 3.8A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI4N62K3

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Operating Temperature
STMicroelectronics STFI4N62K3	550 pF	620 V	TO-281 (I2PAKFP)	MOSFET (Metal Oxide)	N-Channel	3.8 A	2 Ohm	22 nC	TO-262-3 Full Pack I2PAK	10 V	4.5 V	25 W	Through Hole	30 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 620 V 3.8A (Tc) 25W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources