Specification	SIHH21N65E-T1-GE3

Current - Continuous Drain (Id) (Tc)	20.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	99 nC
Input Capacitance (Ciss) (Max)	2404 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	8 mm
Package Name	PowerPAK®
Package Width	8 mm
Power Dissipation (Max)	156 W
Rds On (Max)	170 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHH21 Series

Part	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Package / Case	Vgs (Max)	Package Width	Package Name	Package Length	Mounting Type	Current - Continuous Drain (Id) (Tc)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SIHH21N65E-T1-GE3	2404 pF	156 W	8-PowerTDFN	30 V	8 mm	PowerPAK®	8 mm	Surface Mount	20.3 A	MOSFET (Metal Oxide)	10 V	99 nC	4 V	650 V	N-Channel	170 mOhm	-55 °C	150 °C
Vishay Dale SIHH21N65EF-T1-GE3	2396 pF	156 W	8-PowerTDFN	30 V	8 mm	PowerPAK®	8 mm	Surface Mount	19.8 A	MOSFET (Metal Oxide)	10 V	102 nC	4 V	650 V	N-Channel	180 mOhm	-55 °C	150 °C

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