
PN3565 TIN/LEAD
ObsoleteCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 6.0VEBO 50MA 625MW

PN3565 TIN/LEAD
ObsoleteCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 6.0VEBO 50MA 625MW
Description
General part information
PN35 Series
BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 6.0VEBO 50MA 625MW
Technical Specifications
Parameters and characteristics for this part
| Specification | PN3565 TIN/LEAD |
|---|---|
| Current - Collector (Ic) (Max) | 0.05 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 150 |
| Frequency - Transition | 240 MHz |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92-3 |
| Power - Max | 625 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) | 350 mV |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available