Specification	SIHD3N50D-BE3

Current - Continuous Drain (Id) (Tc)	3 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	175 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252AA
Power Dissipation (Max)	69 W
Rds On (Max)	3.2 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

SIHD3 Series

Part	Vgs (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Package Name	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Technology	FET Type	Vgs(th) (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SIHD3N50DT1-GE3	30 V	12 nC	175 pF	3 A	Surface Mount	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	5 V	3.2 Ohm	500 V	69 W	10 V
Vishay Dale SIHD3N50DT5-GE3	30 V	12 nC	175 pF	3 A	Surface Mount	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	5 V	3.2 Ohm	500 V	69 W	10 V
Vishay Dale SIHD3N50D-BE3	30 V	12 nC	175 pF	3 A	Surface Mount	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	5 V	3.2 Ohm	500 V	69 W	10 V
Vishay Dale SIHD3N50D-E3	30 V	12 nC	175 pF	3 A	Surface Mount	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	5 V	3.2 Ohm	500 V	69 W	10 V

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