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STB12N60DM2AG

STB12N60DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 380 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

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STB12N60DM2AG

STB12N60DM2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 380 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

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Description

General part information

STB12N60DM2AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB12N60DM2AG
Current - Continuous Drain (Id) (Tc)10 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)14.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)614 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)125 W
QualificationAEC-Q101
Rds On (Max)430 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)5 V

Pricing

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CAD

3D models and CAD resources for this part