IXFK64N50Q3

Active

IXYS

MOSFET N-CH 500V 64A TO264AA

Search across all available documentation for this part.

Active

IXYS

MOSFET N-CH 500V 64A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK64N50Q3

Current - Continuous Drain (Id) @ 25°C	64 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	145 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6950 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	1000 W
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type
IXYS IXFK64N50Q3	500 V	6.5 V	1000 W	64 A	6950 pF	-55 °C	150 °C	Through Hole	MOSFET (Metal Oxide)	10 V	TO-264AA (IXFK)	30 V	145 nC	TO-264-3 TO-264AA	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 17.87

General part information

N-Channel 500 V 64A (Tc) 1000W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available