Specification	IRS2103STRPBF

Channel Type	Independent
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting, Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	70 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2103 Series

Part	Logic Voltage - VIL	Logic Voltage - VIH	Fall Time (Typ)	Rise Time (Typ)	Package Name	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Gate Channel	Gate Type	Channel Type	Driven Configuration	Package Length	Package Width	Input Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Number of Drivers	High Side Voltage - Max (Bootstrap)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type
INFINEON IRS2103SPBF	0.8 V	2.5 V	35 ns	70 ns	8-SOIC	10 VDC	20 V	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	Half-Bridge	0.154 in	3.9 mm	Inverting Non-Inverting	600 mA	290 mA	2	600 V	-40 °C	150 °C	Surface Mount
INFINEON IRS2103STRPBF	0.8 V	2.5 V	35 ns	70 ns	8-SOIC	10 VDC	20 V	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	Half-Bridge	0.154 in	3.9 mm	Inverting Non-Inverting	600 mA	290 mA	2	600 V	-40 °C	150 °C	Surface Mount
INFINEON IRS2103PBF	0.8 V	2.5 V	35 ns	70 ns	8-DIP 8-PDIP	10 VDC	20 V	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	Half-Bridge	0.3 in	7.62 mm	Inverting Non-Inverting	600 mA	290 mA	2	600 V	-40 °C	150 °C	Through Hole

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