PMX100UNEZ

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Nexperia USA Inc.

TRANS MOSFET N-CH 20V 1.4A 3-PIN DFN T/R

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PMX100UNEZ

Active

Nexperia USA Inc.

TRANS MOSFET N-CH 20V 1.4A 3-PIN DFN T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMX100UNE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMX100UNEZ

Current - Continuous Drain (Id) (Ta)	1.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	2.1 nC
Input Capacitance (Ciss) (Max)	123 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	0201 (0603 Metric)
Package Name	DFN0603-3 (SOT8013)
Power Dissipation (Max)	4.7 W, 300 mW
Rds On (Max)	160 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	900 mV

PMX100UNE Series

20 V, N-channel Trench MOSFET

Part	FET Type	Rds On (Max)	Package Name	Mounting Type	Vgs (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Technology
Nexperia USA Inc. PMX100UNEZ	N-Channel	160 mOhm	DFN0603-3 (SOT8013)	Surface Mount	8 V	900 mV	4.7 W 300 mW	0201 (0603 Metric)	20 V	123 pF	4.5 V	1.8 V	-55 °C	150 °C	1.4 A	2.1 nC	MOSFET (Metal Oxide)