STD6N65M2
ActiveN-CHANNEL 650 V, 1.2 OHM TYP., 4 A MDMESH M2 POWER MOSFET IN DPAK PACKAGE
STD6N65M2
ActiveN-CHANNEL 650 V, 1.2 OHM TYP., 4 A MDMESH M2 POWER MOSFET IN DPAK PACKAGE
Description
General part information
STD6N65M2 Series
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | STD6N65M2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9.8 nC |
| Input Capacitance (Ciss) (Max) | 226 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) | 1.35 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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