TPN7R506NH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0075 Ω@10V, TSON ADVANCE, U-MOSⅧ-H
TPN7R506NH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0075 Ω@10V, TSON ADVANCE, U-MOSⅧ-H
Description
General part information
TPN7R506NH Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0075 Ω@10V, TSON Advance, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPN7R506NH,L1Q |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 26 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 6.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 22 nC |
| Input Capacitance (Ciss) (Max) | 1800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.1 mm |
| Package Name | 8-TSON Advance |
| Package Width | 3.1 mm |
| Power Dissipation (Max) | 700 mW, 42 W |
| Rds On (Max) | 7.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TPN7R506NH,L1Q | Datasheet
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Simplified CFD Model Application Note
MOSFET Self-Turn-On Phenomenon
TPN7R506NH Data sheet/Japanese
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Hints and Tips for Thermal Design part3
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Electrical Characteristics: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Structures and Characteristics: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Avalanche energy calculation
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
MOSFET SPICE model grade
Derating of the MOSFET Safe Operating Area
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Calculating the Temperature of Discrete Semiconductor Devices
Motor Control (Vacuum Cleaners)
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode