Specification	MSCSM170HRM233AG

Channel Count	4
Configuration	N-Channel
Configuration - Features	Three Level Inverter
Current - Continuous Drain (Id) (Tc)	124 A
Current - Continuous Drain (Id) (Tc) (2)	89 A
Drain to Source Voltage (Vdss) (Option 1)	1700 V
Drain to Source Voltage (Vdss) (Option 2)	1200 V
Gate Charge (Max)	356 nC, 232 nC
Input Capacitance (Ciss) (Max)	3020 pF, 6600 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	Module
Power - Max (Tc)	602 W, 395 W
Rds On (Max)	31 mOhm, 22.5 mOhm, 22.5 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	2.8 V, 3.2 V

MSCSM170HRM233AG-Module Series

1700V, 17.5 mOhm, SP3F, T-Type mSiC™ MOSFET Module

Part	Vgs(th) (Max)	Gate Charge (Max)	Power - Max (Tc)	Drain to Source Voltage (Vdss) (Option 1)	Drain to Source Voltage (Vdss) (Option 2)	Operating Temperature (Max)	Operating Temperature (Min)	Mounting Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Technology	Package / Case	Current - Continuous Drain (Id) (Tc) (2)	Current - Continuous Drain (Id) (Tc)	Configuration - Features	Configuration	Channel Count
Microchip Technology MSCSM170HRM233AG	2.8 V 3.2 V	232 nC 356 nC	395 W 602 W	1700 V	1200 V	175 °C	-40 °C	Chassis Mount	3020 pF 6600 pF	22.5 mOhm 22.5 mOhm 31 mOhm	Silicon Carbide (SiC)	Module	89 A	124 A	Three Level Inverter	N-Channel	4

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