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IPP65R095C7XKSA1 - TO-220-3

IPP65R095C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 95 MOHM; HIGHEST PERFORMANCE

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IPP65R095C7XKSA1 - TO-220-3

IPP65R095C7XKSA1

Active
Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 95 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP65R095C7XKSA1
Current - Continuous Drain (Id) @ 25°C24 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]45 nC
Input Capacitance (Ciss) (Max) @ Vds2140 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]128 W
Rds On (Max) @ Id, Vgs95 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.01
10$ 4.03
100$ 2.91
500$ 2.43
1000$ 2.42

Description

General part information

IPP65R095 Series

650V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for use in PFC stages and PWM stages for e.g. computing, server, telecom, UPS and solar.

Documents

Technical documentation and resources