JANS2N5796UC/TR

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BIPOLAR TRANSISTORS - BJT DUAL SMALL-SIGNAL BJT

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JANS2N5796UC/TR

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Microchip Technology

BIPOLAR TRANSISTORS - BJT DUAL SMALL-SIGNAL BJT

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Description Specifications Series Pricing CAD Documents

Description

General part information

2N5796 Series

This specification covers the performance requirements for two electrically isolated, PNP silicon, 2N5795 and 2N5796 unitized, dual 2N2907A transistors as one dual unit for high speed saturated switching applications. Both matched and unmatched types are covered. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/496. Provisions for radiation hardness assurance (RHA) are provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Technical Specifications

Parameters and characteristics for this part

Specification	JANS2N5796UC/TR

Current - Collector (Ic) (Max)	0.6 mA
Current - Collector Cutoff (Max)	10 µA
DC Current Gain (hFE) (Min)	100
Grade	Military
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-65 °C
Package / Case	No Lead, 6-SMD
Package Name	UC
PNP Count	2
Power - Max	0.6 W
Qualification	MIL-PRF-19500, 496
Transistor Configuration	Dual
Transistor Type	PNP
Vce Saturation (Max)	1.6 V
Voltage - Collector Emitter Breakdown (Max)	60 V

2N5796 Series

PNP Silicon Dual -60V, -0.6A

Part	PNP Count	Transistor Configuration	Transistor Type	Package Name	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max)	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Power - Max	Vce Saturation (Max)	Qualification	Grade
Microchip Technology 2N5796A	2	Dual	PNP	TO-78-6	TO-78-6 Metal Can	60 V	10 µA	0.6 mA	100	Through Hole	-65 °C	175 °C	0.6 W	1.6 V
Microchip Technology JANS2N5796U/TR	2	Dual	PNP	U	6-SMD No Lead	60 V	10 µA	0.6 mA	100	Surface Mount	-65 °C	175 °C	0.6 W	1.6 V	496 MIL-PRF-19500	Military
Microchip Technology JAN2N5796	2	Dual	PNP	TO-78-6	TO-78-6 Metal Can	60 V	10 µA	0.6 mA	100	Through Hole	-65 °C	175 °C	0.6 W	1.6 V	496 MIL-PRF-19500	Military
Microchip Technology JANTXV2N5796U/TR	2	Dual	PNP	6-SMD	6-SMD No Lead	60 V	10 µA	0.6 mA	100	Surface Mount	-65 °C	175 °C	0.6 W	1.6 V	496 MIL-PRF-19500	Military
Microchip Technology JANS2N5796	2	Dual	PNP	TO-78-6	TO-78-6 Metal Can	60 V	10 µA	0.6 mA	100	Through Hole	-65 °C	175 °C	0.6 W	1.6 V	496 MIL-PRF-19500	Military
Microchip Technology JANTXV2N5796A	2	Dual	PNP	TO-78-6	TO-78-6 Metal Can	60 V	10 µA	0.6 mA	100	Through Hole	-65 °C	175 °C	0.6 W	1.6 V	496 MIL-PRF-19500	Military
Microchip Technology JANS2N5796UC/TR	2	Dual	PNP	UC	6-SMD No Lead	60 V	10 µA	0.6 mA	100	Surface Mount	-65 °C	175 °C	0.6 W	1.6 V	496 MIL-PRF-19500	Military
Microchip Technology JAN2N5796U	2	Dual	PNP	6-SMD	6-SMD No Lead	60 V	10 µA	0.6 mA	100	Surface Mount	-65 °C	175 °C	0.6 W	1.6 V	496 MIL-PRF-19500	Military
Microchip Technology 2N5796U/TR	2	Dual	PNP	6-SMD	6-SMD No Lead		10 µA		100	Surface Mount	-65 °C	175 °C		1.6 V	496 MIL-PRF-19500	Military
Microchip Technology JANTXV2N5796U	2	Dual	PNP	6-SMD	6-SMD No Lead	60 V	10 µA	0.6 mA	100	Surface Mount	-65 °C	175 °C	0.6 W	1.6 V	496 MIL-PRF-19500	Military

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

JANS2N5796UC/TR | Datasheet