Specification	SI4948BEY-T1-GE3

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	2.4 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Max)	22 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max	1.4 W
Rds On (Max)	120 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	3 V

SI4 Series

Part	Vgs (Max)	Power Dissipation (Max)	Package Length	Package Name	Package Width	Technology	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Mounting Type	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id)	FET Feature	Power - Max	Channel Count	Configuration	Configuration - Features	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SI4431BDY-T1-E3	20 V	1.5 W	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	3 V	-55 °C	150 °C	P-Channel	30 V	5.7 A	20 nC	Surface Mount	30 mOhm	10 V	4.5 V
Vishay Dale SI4948BEY-T1-GE3			0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	3 V	-55 °C	175 °C		60 V		22 nC	Surface Mount	120 mOhm			2.4 A	Logic Level Gate	1.4 W	2	P-Channel	Dual
Vishay Dale SI4634DY-T1-GE3	20 V	2.5 W 5.7 W	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	2.6 V	-55 °C	150 °C	N-Channel	30 V		68 nC	Surface Mount	5.2 mOhm	10 V	4.5 V							3150 pF	24.5 A
Vishay Dale SI4386DY-T1-GE3	20 V	1.47 W	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	2.5 V	-55 °C	150 °C	N-Channel	30 V	11 A	18 nC	Surface Mount	7 mOhm	10 V	4.5 V
Vishay Dale SI4943BDY-T1-E3			0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	3 V	-55 °C	150 °C		20 V		25 nC	Surface Mount	19 mOhm			6.3 A	Logic Level Gate	1.1 W	2	P-Channel	Dual
Vishay Dale SI4204DY-T1-GE3			0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	2.4 V	-55 °C	150 °C		20 V		45 nC	Surface Mount	4.6 mOhm			19.8 A		3.25 W	2	N-Channel	Dual	2110 pF
Vishay Dale SI4100DY-T1-GE3	20 V	2.5 W 6 W	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	4.5 V	-55 °C	150 °C	N-Channel	100 V		20 nC	Surface Mount	63 mOhm	10 V	6 V							600 pF	6.8 A
Vishay Dale SI4465ADY-T1-GE3	8 V	3 W 6.5 W	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	1 V	-55 °C	150 °C	P-Channel	8 V	13.7 A	85 nC	Surface Mount	9 mOhm	4.5 V	1.8 V
Vishay Dale SI4932DY-T1-GE3			0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	2.5 V	-55 °C	150 °C		30 V		48 nC	Surface Mount	15 mOhm			8 A	Logic Level Gate	3.2 VA	2	N-Channel	Dual	1750 pF
Vishay Dale SI4850EY-T1-E3	20 V	1.7 W	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	3 V	-55 °C	175 °C	N-Channel	60 V	6 A	27 nC	Surface Mount	22 mOhm	10 V	4.5 V

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SI4948BEY-T1-GE3 | Datasheet