Specification	BTS282ZE3180AATMA2

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	49 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Temperature Sensing Diode
FET Type	N-Channel
Gate Charge (Max)	232 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package Leads	7 Leads
Package Name	D2PAK, PG-TO263-7-1
Power Dissipation (Max)	300 W
Qualification	AEC-Q101
Rds On (Max)	6.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

BTS282 Series

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Current - Continuous Drain (Id) (Tc)	Grade	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Vgs (Max)	FET Feature	Mounting Type	Qualification	Operating Temperature (Max)	Operating Temperature (Min)	Package Leads	Package Name	Rds On (Max)	Technology	Vgs(th) (Max)	Gate Charge (Max)
INFINEON BTS282ZE3180AATMA2	49 V	10 V	4.5 V	N-Channel	80 A	Automotive	4800 pF	300 W	20 V	Temperature Sensing Diode	Surface Mount	AEC-Q101	175 °C	-40 °C	7 Leads	D2PAK PG-TO263-7-1	6.5 mOhm	MOSFET (Metal Oxide)	2 V	232 nC

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