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PCDD08120G1_L2_00001

PCDD08120G1_L2_00001

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Panjit International Inc.

SIC SCHOTTKY DIODES 1200V SIC SCHOTTKY BARRIER DIODE

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PCDD08120G1_L2_00001

PCDD08120G1_L2_00001

Active
Panjit International Inc.

SIC SCHOTTKY DIODES 1200V SIC SCHOTTKY BARRIER DIODE

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Description

General part information

SiC Gen.1 Series

SIC SCHOTTKY DIODES 1200V SIC SCHOTTKY BARRIER DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationPCDD08120G1_L2_00001
Capacitance418 pF
Current - Average Rectified (Io)8 A
Current - Reverse Leakage60 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252AA
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.7 V

Pricing

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