
PCDD08120G1_L2_00001
ActivePanjit International Inc.
SIC SCHOTTKY DIODES 1200V SIC SCHOTTKY BARRIER DIODE

PCDD08120G1_L2_00001
ActivePanjit International Inc.
SIC SCHOTTKY DIODES 1200V SIC SCHOTTKY BARRIER DIODE
Description
General part information
SiC Gen.1 Series
SIC SCHOTTKY DIODES 1200V SIC SCHOTTKY BARRIER DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | PCDD08120G1_L2_00001 |
|---|---|
| Capacitance | 418 pF |
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage | 60 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252AA |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
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CAD
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