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SOT669

PSMN2R4-30YLDX

Active
Nexperia USA Inc.

N-CHANNEL 30 V, 2.4 MΩ LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

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SOT669

PSMN2R4-30YLDX

Active
Nexperia USA Inc.

N-CHANNEL 30 V, 2.4 MΩ LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

Find alt

Description

General part information

PSMN2R4-30YLD Series

Ultra low QG, QGDand QOSSfor high system efficiency, especially at higher switching frequencies

Superfast switching with soft-recovery; s-factor > 1

Low spiking and ringing for low EMI designs

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN2R4-30YLDX
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)31.3 nC
Input Capacitance (Ciss) (Max)2256 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-669, SC-100
Package NameLFPAK56, Power-SO8
Power Dissipation (Max)106 W
Rds On (Max)2.4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.2 V

Pricing

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CAD

3D models and CAD resources for this part