Specification	IRL620STRLPBF

Current - Continuous Drain (Id) (Tc)	5.2 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	16 nC
Input Capacitance (Ciss) (Max)	360 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	50 W, 3.1 W
Rds On (Max)	800 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2 V

IRL620 Series

Part	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	FET Type	Power Dissipation (Max)	Gate Charge (Max)	Package Name	Rds On (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Technology
Vishay Dale IRL620STRLPBF	5.2 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 V	-55 °C	150 °C	Surface Mount	N-Channel	3.1 W 50 W	16 nC	TO-263 (D2PAK)	800 mOhm	4 V	10 V	2 V	360 pF	MOSFET (Metal Oxide)
Vishay Dale IRL620PBF	5.2 A	10 V	TO-220-3	200 V	-55 °C	150 °C	Through Hole	N-Channel	50 W	16 nC	TO-220AB	800 mOhm	4 V	5 V	2 V	360 pF	MOSFET (Metal Oxide)
Vishay Dale IRL620PBF-BE3	5.2 A	10 V	TO-220-3	200 V	-55 °C	150 °C	Through Hole	N-Channel	50 W	16 nC	TO-220AB	800 mOhm	4 V	5 V	2 V	360 pF	MOSFET (Metal Oxide)
Vishay Dale IRL620S	5.2 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 V	-55 °C	150 °C	Surface Mount	N-Channel	3.1 W 50 W	16 nC	TO-263 (D2PAK)	800 mOhm	4 V	10 V	2 V	360 pF	MOSFET (Metal Oxide)

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