Specification	GA05JT12-263

Current - Continuous Drain (Id) (Tc)	15 A
Drain to Source Voltage (Vdss)	1200 V
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package Leads	7 Leads
Package Name	D2PAK, TO-263-7
Power Dissipation (Max)	106 W
Technology	SiC (Silicon Carbide Junction Transistor)

GA05JT12 Series

Part	Package Leads	Package Name	Operating Temperature	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Drain to Source Voltage (Vdss)
GeneSiC Semiconductor GA05JT12-263	7 Leads	D2PAK TO-263-7	175 °C	Surface Mount	106 W	15 A	SiC (Silicon Carbide Junction Transistor)	1200 V
GeneSiC Semiconductor GA05JT12-263	7 Leads	D2PAK TO-263-7	175 °C	Surface Mount	106 W	15 A	SiC (Silicon Carbide Junction Transistor)	1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources