IXFQ20N50P3

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IXYS

MOSFET N-CH 500V 20A TO3P

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IXYS

MOSFET N-CH 500V 20A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXFQ20N50P3

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	380 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id
IXYS IXFQ20N50P3	380 W	SC-65-3 TO-3P-3	-55 °C	150 °C	MOSFET (Metal Oxide)	10 V	500 V	20 A	Through Hole	N-Channel	1800 pF	36 nC	300 mOhm	30 V	TO-3P	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 2.98

General part information

N-Channel 500 V 20A (Tc) 380W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available