Specification	NE68133-T1B-R34-A

Current - Collector (Ic) (Max)	65 mA
DC Current Gain (hFE) (Min)	80
Frequency - Transition	9 GHz
Gain	13 dB
Mounting Type	Surface Mount
Noise Figure (Typical)	1.2 dB
Operating Temperature	150 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3
Power - Max	200 mW
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10 V

NE68133 Series

Part	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min)	Operating Temperature	Power - Max	Transistor Type	Package / Case	Frequency - Transition	Gain	Package Name	Noise Figure (Typical)	Voltage - Collector Emitter Breakdown (Max)	Mounting Type
Renesas Electronics Corporation NE68133-T1B-R33-A	65 mA	50	150 °C	200 mW	NPN	SC-59 SOT-23-3 TO-236-3	9 GHz	13 dB	SOT-23-3	1.2 dB	10 V	Surface Mount
Renesas Electronics Corporation NE68133-A	65 mA	50	150 °C	200 mW	NPN	SC-59 SOT-23-3 TO-236-3	9 GHz	13 dB	SOT-23-3	1.2 dB	10 V	Surface Mount
Renesas Electronics Corporation NE68133-T1B-A	65 mA	50	150 °C	200 mW	NPN	SC-59 SOT-23-3 TO-236-3	9 GHz	13 dB	SOT-23-3	1.2 dB	10 V	Surface Mount
Renesas Electronics Corporation NE68133-T1B-R34-A	65 mA	80	150 °C	200 mW	NPN	SC-59 SOT-23-3 TO-236-3	9 GHz	13 dB	SOT-23-3	1.2 dB	10 V	Surface Mount
Renesas Electronics Corporation NE68133-T1B-R35-A	65 mA	125	150 °C	200 mW	NPN	SC-59 SOT-23-3 TO-236-3	9 GHz	13 dB	SOT-23-3	1.2 dB	10 V	Surface Mount

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