Specification	IXTU1R4N60P

Current - Continuous Drain (Id) (Tc)	1.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	5.2 nC
Input Capacitance (Ciss) (Max)	140 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	TO-251AA
Power Dissipation (Max)	50 W
Rds On (Max)	9 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5.5 V

IXTU1 Series

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package Name	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Rds On (Max)	FET Type	Package / Case	Input Capacitance (Ciss) (Max)	Technology	Vgs(th) (Max)
LITTELFUSE IXTU1R4N60P	30 V	600 V	50 W	TO-251AA	5.2 nC	10 V	-55 °C	150 °C	1.4 A	Through Hole	9 Ohm	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	140 pF	MOSFET (Metal Oxide)	5.5 V

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