2SC5712(TE12L,F)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 50 V, 3 A, PW-MINI
2SC5712(TE12L,F)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 50 V, 3 A, PW-MINI
Description
General part information
2SC5712 Series
Bipolar Transistors, NPN Bipolar Transistor, 50 V, 3 A, PW-Mini
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SC5712(TE12L,F) |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 400 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-243AA |
| Package Name | PW-MINI |
| Power - Max | 1 VA |
| Transistor Type | NPN |
| Vce Saturation (Max) | 140 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
2SC5712(TE12L,F) | Datasheet
The terms used in data sheets:Bipolar Transistor Application Notes
2SC5712 Data sheet/Japanese
The maximum ratings:Bipolar Transistor Application Notes
The thermal stability and thermal design:Bipolar Transistor Application Notes
Surface Mount Small Signal Transistor (BJT) Precautions for use
The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes
Selection Guide Power Devices 2025 Rev1.0