Specification	SI2323CDS-T1-GE3

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	25 nC
Input Capacitance (Ciss) (Max)	1090 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	1.25 W, 2.5 W
Rds On (Max)	39 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SI2323 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Rds On (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Gate Charge (Max)	FET Type	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Package / Case	Technology	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI2323DDS-T1-GE3	-55 °C	150 °C	SOT-23	39 mOhm	1 V	20 V	1.7 W 960 mW	Surface Mount	36 nC	P-Channel	1160 pF	4.5 V	1.8 V	5.3 A	8 V	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)
Vishay Dale SI2323DS-T1-E3	-55 °C	150 °C	SOT-23-3 (TO-236)	39 mOhm	1 V	20 V	750 mW	Surface Mount	19 nC	P-Channel	1020 pF	4.5 V	1.8 V		8 V	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	3.7 A
Vishay Dale SI2323CDS-T1-GE3	-55 °C	150 °C	SOT-23-3 (TO-236)	39 mOhm	1 V	20 V	1.25 W 2.5 W	Surface Mount	25 nC	P-Channel	1090 pF	4.5 V	1.8 V	6 A	8 V	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)

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