IXFR34N80

Obsolete

IXYS

MOSFET N-CH 800V 28A ISOPLUS247

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Obsolete

IXYS

MOSFET N-CH 800V 28A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR34N80

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	270 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	416 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
IXYS IXFR34N80	-55 °C	150 °C	20 V	270 nC	Through Hole	28 A	ISOPLUS247™	MOSFET (Metal Oxide)	TO-247-3	800 V	7500 pF	416 W	4 V	N-Channel	10 V	240 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 28A (Tc) 416W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available