Specification	SIUD403ED-T1-GE3

Current - Continuous Drain (Id) (Ta)	500 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	1 nC
Input Capacitance (Ciss) (Max)	31 pF, 31 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 0806
Package Name	PowerPAK® 0806
Power Dissipation (Max)	1.25 W
Rds On (Max)	1.25 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	900 mV

SIUD403 Series

Part	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Package Name	FET Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)
Vishay Dale SIUD403ED-T1-GE3	8 V	4.5 V	1.5 V	PowerPAK® 0806	31 pF 31 pF	1 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	500 mA	1.25 W	PowerPAK® 0806	P-Channel	1.25 Ohm	20 V	900 mV

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