1N2129A

Active

GeneSiC Semiconductor

DIODE GEN PURP 100V 60A DO5

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE GEN PURP 100V 60A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N2129A

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP 100V 60A DO5

Part	Speed	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Technology
GeneSiC Semiconductor 1N2129A	Standard Recovery >500ns	200 mA	DO-5	200 C	-65 C	1.1 V	Chassis, Stud Mount	10 µA	100 V	60 A	DO-203AB, DO-5, Stud	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 60A Chassis, Stud Mount DO-5

Technical documentation and resources