
MJD112T4
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 25 MHZ, 20 W, 2 A, 1000 ROHS COMPLIANT: YES

MJD112T4
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 25 MHZ, 20 W, 2 A, 1000 ROHS COMPLIANT: YES
Description
General part information
MJD112 Series
The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD112T4 |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 20 µA |
| DC Current Gain (hFE) (Min) | 1000 |
| Frequency - Transition | 25 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power - Max | 20 W |
| Transistor Type | NPN, Darlington |
| Vce Saturation (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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CAD
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Documents
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