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MJD112T4

MJD112T4

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 25 MHZ, 20 W, 2 A, 1000 ROHS COMPLIANT: YES

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MJD112T4

MJD112T4

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 25 MHZ, 20 W, 2 A, 1000 ROHS COMPLIANT: YES

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Description

General part information

MJD112 Series

The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration.

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD112T4
Current - Collector (Ic) (Max)2 A
Current - Collector Cutoff (Max)20 µA
DC Current Gain (hFE) (Min)1000
Frequency - Transition25 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power - Max20 W
Transistor TypeNPN, Darlington
Vce Saturation (Max)3 V
Voltage - Collector Emitter Breakdown (Max)100 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources