Description
General part information
IDK05G65 Series
The CoolSiC™ Schottky diode 650 V, 12 A generation 5 in ThinPAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).
Technical Specifications
Parameters and characteristics for this part
| Specification | IDK05G65C5XTMA2 |
|---|---|
| Capacitance | 160 pF |
| Current - Average Rectified (Io) | 5 A |
| Current - Reverse Leakage | 830 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
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CAD
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