Specification	IPD80N06S3-09

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	88 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	6100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3-11
Power Dissipation (Max)	107 W
Qualification	AEC-Q101
Rds On (Max)	8.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPD80N Series

Part	FET Type	Technology	Input Capacitance (Ciss) (Max)	Grade	Gate Charge (Max)	Power Dissipation (Max)	Qualification	Package / Case	Vgs (Max)	Rds On (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
INFINEON IPD80N06S3-09	N-Channel	MOSFET (Metal Oxide)	6100 pF	Automotive	88 nC	107 W	AEC-Q101	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	8.4 mOhm	PG-TO252-3-11	80 A	10 V	Surface Mount	55 V	4 V	-55 °C	175 °C

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