PBSS5230T-QR
ActiveNexperia USA Inc.
30 V, 2 A PNP LOW VCESAT TRANSISTOR
PBSS5230T-QR
ActiveNexperia USA Inc.
30 V, 2 A PNP LOW VCESAT TRANSISTOR
Description
General part information
PBSS5230T-Q Series
PNP low VCEsattransistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS5230T-QR |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 300 |
| Frequency - Transition | 200 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power - Max | 300 mW |
| Qualification | AEC-Q101 |
| Transistor Type | PNP |
| Vce Saturation (Max) | 350 mV |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Reel pack for SMD, 7"; Q3/T4 product orientation
Nexperia package poster
30 V, 2 A PNP low VCEsat transistor
Reflow soldering profile
PBSS5230T-Q Nexperia Product Reliability
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Questions about package outline drawings
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Wave soldering profile