Description
General part information
IPB60R105 Series
Infineon’s600V CoolMOS™ CFD7Superjunction MOSFET IPB60R105CFD7 in D2PAK package is ideally suited for resonant topologies in high powerSMPS, such asserver,telecomandEV charging stations, where it enables significant efficiency improvements. As successor to theCFD2 SJ MOSFETfamily it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB60R105CFD7ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 21 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 42 nC |
| Input Capacitance (Ciss) (Max) | 1752 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3-2 |
| Power Dissipation (Max) | 106 W |
| Rds On (Max) | 105 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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