Specification	SI3443CDV-T1-GE3

Current - Continuous Drain (Id) (Tc)	5.97 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	12.4 nC
Input Capacitance (Ciss) (Max)	610 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	2 W, 3.2 W
Rds On (Max)	60 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

SI3443 Series

Part	Rds On (Max)	Vgs (Max)	Gate Charge (Max)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Technology	Package Name	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI3443CDV-T1-GE3	60 mOhm	12 V	12.4 nC	2 W 3.2 W	Surface Mount	5.97 A	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C	P-Channel	2.5 V	4.5 V	MOSFET (Metal Oxide)	6-TSOP	1.5 V	610 pF	20 V
Vishay Dale SI3443CDV-T1-E3	60 mOhm	12 V	12.4 nC	2 W 3.2 W	Surface Mount	5.97 A	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C	P-Channel	2.5 V	4.5 V	MOSFET (Metal Oxide)	6-TSOP	1.5 V	610 pF	20 V
Vishay Dale SI3443BDV-T1-BE3	60 mOhm	12 V	9 nC	1.1 W	Surface Mount		SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C	P-Channel	2.5 V	4.5 V	MOSFET (Metal Oxide)	6-TSOP	1.4 V		20 V	3.6 A

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