
HN1D03FU,LF
ActiveToshiba Semiconductor and Storage
DIODES, 80 V/0.1 A SWITCHING DIODE, SOT-363(US6)

HN1D03FU,LF
ActiveToshiba Semiconductor and Storage
DIODES, 80 V/0.1 A SWITCHING DIODE, SOT-363(US6)
Description
General part information
HN1D03FU Series
Diodes, 80 V/0.1 A Switching diode, SOT-363(US6)
Technical Specifications
Parameters and characteristics for this part
| Specification | HN1D03FU,LF |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 80 mA |
| Current - Reverse Leakage | 500 nA |
| Diode Configuration | CA + CC |
| Diode Pair Count | 2 pair |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 125 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | US6 |
| Reverse Recovery Time (trr) | 4 ns |
| Speed | Any Speed, Small Signal |
| Speed - Fast Recovery (Maximum) | 200 mA |
| Speed - Small Signal Current Max | 200 mA, 200 mA, 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) | 1.2 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
HN1D03FU,LF | Datasheet
Mini catalog Introduction of Toshiba diode lineup for Industries
Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
Basics of Diodes (Power Losses and Thermal Design)
Selection Guide Small Signal 2025 Rev1.0
Basics of Diodes (Types and Overview of Diodes)
Mini catalog Introduction to Toshiba Switching Diode Line-up
Surface Mount Small Signal Transistor (BJT) Precautions for use
HN1D03FU Data sheet/Japanese